- 您现在的位置：买卖IC网 > Sheet目录457 > IXFR32N80P (IXYS)MOSFET N-CH 800V 20A ISOPLUS247
PolarHV TM HiPerFET IXFR 32N80P
Power MOSFET
ISOPLUS247 TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V DSS =
I D25 =
R DS(on) ≤
t rr ≤
800 V
20 A
290 m ?
250 ns
Symbol
Test Conditions
Maximum Ratings
ISOPLUS247 (IXFR)
V DSS
V DGR
V GSS
V GSM
I D25
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
T C = 25 ° C
800
800
± 30
± 40
20
V
V
V
V
A
E153432
(Isolated Tab)
I DM
I AR
E AR
E AS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
70
16
50
1.5
A
A
mJ
J
G = Gate
S = Source
Features
D = Drain
dv/dt
P D
T J
T JM
T stg
T L
F C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 4 ?
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Mounting force
10
300
-55 ... +150
150
-55 ... +150
300
20..120/4.5..26
V/ns
W
° C
° C
° C
° C
N/lb
l
l
l
l
l
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
V ISOL
Weight
50/60 Hz, RMS
t = 1 minute
2500
5
V~
g
Applications
l
DC-DC converters
l
l
Battery chargers
Switched-mode and resonant-mode
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
l
power supplies
DC choppers
BV DSS
V GS = 0 V, I D = 250 μ A
800
V
l
AC motor control
Easy assembly
Space savings
V GS(th)
I GSS
V DS = V GS , I D = 8 mA
V GS = ± 30 V DC , V DS = 0
3.0
5.0
± 200
V
nA
Advantages
l
l
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
25
1000
μ A
μ A
l
High power density
R DS(on)
V GS = 10 V, I D = I T
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
290
m ?
? 2006 IXYS All rights reserved
DS99419E(01/06)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXFR34N80
MOSFET N-CH 800V 28A ISOPLUS247
IXFR36N60P
MOSFET N-CH 600V 20A ISOPLUS247
IXFR40N90P
MOSFET N-CH ISOPLUS247
IXFR44N50P
MOSFET N-CH 500V 24A ISOPLUS247
IXFR44N50Q3
MOSFET N-CH 500V 25A ISOPLUS247
IXFR44N60
MOSFET N-CH 600V 38A ISOPLUS247
IXFR44N80P
MOSFET N-CH 800V 25A ISOPLUS247
IXFR48N50Q
MOSFET N-CH 500V 40A ISOPLUS247
相关代理商/技术参数
IXFR32N80Q3
功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 800V/24A
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR34N80
功能描述:MOSFET 800V 28A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR36N50P
功能描述:MOSFET 500V 36A
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR36N60P
功能描述:MOSFET 600V 20A
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR38N80Q2
功能描述:MOSFET 38 Amps 800V 0.24 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR38N80Q2_08
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFET Q2-Class
IXFR40N50Q2
功能描述:MOSFET 500V 30A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFR40N50Q2_08
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFET Q2-Class
